LSAT (100) 10x10x0.5 mm Square Substrate - 2 side epi polished, Anneaing in oxygen - LSATa101005S2brown Dry Room One grain boundary is formed

One grain boundary  is formed under high temperature and pressure

Major Flat Orientation:     <1-10>

Q &A Why Can not sell in a small package

The dielectric properties of LaAlO3  crystal are well-suitable for low-loss microwave and dielectric resonance applications

LSAT (100) 10x10x0.5 mm Square Substrate - 2 side epi polished, Anneaing in oxygen - LSATa101005S2brown Dry Room One grain boundary is formedLSAT (LaAlO3)0. 3 (Sr2AlTaO6)0. 7 is a newly developing crystal with peroviskite structure and twin free. LSAT has excellent lattice match with high Tc superconductors and many oxide materials. LSAT has lower melting point and can be grown by CZ technology at lower cost, therefore, it is expected to replace LaAlO3 and SrTiO3 as a common single crystal substrate for epitaxial oxide thin films for gain magnetic ferro electronic and superconductive