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M06500 - SEMI M65 - 化合物半導体エピタキシャルウェーハに使用するサファイア基板の仕様 Revision:SEMI M65-0306E2 - Superseded 4 The DCV sections of
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Description
4 The DCV sections of this Test Method refer to closed vessel microwave acid decomposition at elevated temperature and pressure
and recovery (¶ 6
the user estimates either the probability density function (PDF) or cumulative distribution function (CDF) of the process characteristic or characteristics of interest
The edge lengths specified range from 202
M06500 - SEMI M65 - 化合物半導体エピタキシャルウェーハに使用するサファイア基板の仕様 Revision:SEMI M65-0306E2 - Superseded 4 The DCV sections ofglobal Compound Semiconductor Materials Committee2006116global Audits and Reviews Subcommittee20062www. semi. org20063CD ROM E20068R2 2 Referenced SEMI Standards SEMI M1 Specifications for Polished Monocrystalline Silicon Wafers SEMI M3 Specifications for Polished Monocrystalline Sapphire Substrates SEMI MF26 Test Method for Determining the Orientation of a Semi conductive Single Crystal SEMI MF523 Practice for Unaided Visual Inspections of Polished
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