Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 3"dia x 0.50 mm t, N-type ,P-doped 1SP R:5-15 ohm.cm Fe Size: 2" dia x 0

Size: 2" dia x 0

Zirconia Milling Balls Combo:

Dimension: 475 mm L x 255 mm W x 105 mm H

Package:   Packing in 1000 class clean room  with a 100-grade clean plastic bag

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 3"dia x 0.50 mm t, N-type ,P-doped 1SP R:5-15 ohm.cm Fe Size: 2" dia x 0Thermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 3" Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index 1. 455 Silicon Wafer Specifications: Conductive type: N type P dped Resistivity: 5 15 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" + 0. 5 mm in diameter x 0. 5 mm + 0. 05 mm th Orientation: (111) + 1o