Al2O3- Sapphire Wafer, C-plane (0001), 10x10x0.1mm, 1SP - ALC101001S1 Al2O3 (Sapphire) Ball mill and sieve the

Ball mill and sieve the powder and apply only the 32~75 microns powder to the pressing die to avoid damages

Click the video below to see how to heat seal the tab onto the pouch cell case after the welding:

Model EQ-Die-75D Die Sleeve Height 2 3/8" (60 mm) Inner Diameter 3" (76

Diameter: 70 mm (2

Al2O3- Sapphire Wafer, C-plane (0001), 10x10x0.1mm, 1SP - ALC101001S1 Al2O3 (Sapphire) Ball mill and sieve theFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 10 x 10 x 0. 1(+ 0. 05) mm thick Orientation: <0001> + 0. 5o Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A one side polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag