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InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US Dispensers & Feeders mso-pagination:widow-orphan
InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US Dispensers & Feeders mso-pagination:widow-orphan
$948.75
Description
mso-pagination:widow-orphan
k at 300k Linear Eelectric - Optical Coeff r33 : > 600 pm/V Refractive index 2
Electrical conductivity (bulk)
Polishing: two sides polished
InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US Dispensers & Feeders mso-pagination:widow-orphan2" InSb wafer (P type, Ge doped ) Size: 2" dia x 0. 45mm thick Orientation: <100> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration (0. 5 5. 0) x10^17 cc @77K Mobility > (4. 0 8. 4)x10^3 cm2 Vs EPD <200 cm 2
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