InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished Applicators This product is not manufactured

This product is not manufactured by MTI

Wafer Size:    0

working temperature 1800 oC Warning Please don't use alumina tube under vacuum at temperature > 1500 oC when vertically-mounted and >1400 oC when horizontally-mounted

Input Power AC 220V 50/60Hz

InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished Applicators This product is not manufactured5x5x0. 45 mm InSb wafer (P type, Ge doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Orientation Flat Doping Ge ndoped Conductivity type P type Carrier Concentration (0. 05 0. 50)E17@77K