LaAlO3, (100) ori. 10x10x1.0 mm substrate, 1 side EPI polished Orientation 10-14

LaAlO3, (100) ori. 10x10x1.0 mm substrate, 1 side EPI polished Orientation 10-14LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 10 x 10 x 1. 0 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0. 5

If anyone feels the product conflict with your IP

Back surface finish:                   Silicon ( 111) N-type P-doped R:1-10 ohm

liquid metal splash protection

Chmistry:                    ß-Ga2O3

or polishing pad

Alumina tubes are consumable

P_(actual on working piece )= F/S_(Cross-section area of the working piece )

Mini Arc Melter (185A) Glovebox Compatible - SP-MSM130

5" spindle

powder screened to 200 MESH Melting point / Melting range 900 - 975° C  SDS XRD File Package 50 grams units in a glass container

Net weight: 8

this non-toxic polymer binder (Acrylic acid modified cellulose) can be used to mixed with cathode powde to form uniform slurry for Li-ion battery applications