GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 2sp, (8.62-9.38) x 10^17 /cm^3 High Purity Chemical A-Z EQ-Lib-AB is used for preparing

EQ-Lib-AB is used for preparing Li-ion battery electrode material and conducting material

Product options Product size: 80 - 200 mesh according to operating time

Welding Current 0-99% Adjustable  Welding probes Allow independent adjustment for pressure

most metals with ease

GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 2sp, (8.62-9.38) x 10^17 /cm^3 High Purity Chemical A-Z EQ-Lib-AB is used for preparingGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (8. 62 9. 38) x 10^17 cm^3 Mobility: 168 173 cm^2 V. S EPD: <5000 cm^2 Resistivity: (3. 96 4. 2)x10^ 2 ohm. cm Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers