Al2O3- Sapphire Wafer, C-plane (0001), 1" X1"x0.5 mm 2SP - ALC252505S2 3D & Chemical A-Z Max sample height: <100mm

Max sample height: <100mm

Time interval: 1 - 999999s

Orientation tolerance: +/-0

Pressure Control

Al2O3- Sapphire Wafer, C-plane (0001), 1" X1"x0.5 mm 2SP - ALC252505S2 3D & Chemical A-Z Max sample height: <100mmFeatures: Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III V nitrides and for many other epitaxial films Wafer size: 1" X1"X0. 5 mm thickness (0001) C plane orientation + 0. 5 Deg Polished surface: two sides epi polished by special CMP technology. Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container Typical Properties: Crystal Structure: Hexagonal. a=4. 758