GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film: 5um GaSb

GaN Template on Sapphire(0001) 5 x 5 mm x 0.5mm,1sp .GaN Film: 5um GaSbGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate Specifications Size : 5mmx5mm Substrate Sapphire, Orientation C (0001) + 1. 0 o Conduction Type: n type, Resistivity < 0. 5 Ohm cm Front Surface Finish (Ga Face) As grown Back Surface

One pair of CR2032 button cells case

InP Orientation: (100)

Moisture Vapor / O2 Transmission Rate

Back Surface Finish          Fine ground

MD Shrinkage <= 8

Overall Width: 1

Mobility:  1630-1870 cm^2/V

Please click the picture below to choose a SS or super-alloy tube from 25 mm to 50 mm  ( Pic

Constant Resistance Discharging

Polish:             One side optical polished

-Size: (LxWxT) 25 mm x 25 mm x 0

SiC blade provides better cut-off rate  and much lower cost for all sample cutting